Hereinafter, some embodiments of the disclosure are described in detail with reference to the drawings. 3.2.2 Operation of Light Emission Control System Sectionģ.3 Issues (First Embodiment)Ĥ.4 Modifications (Second Embodiment)ĥ.4 Modifications (Third Embodiment)Ħ.4 Modifications (Fourth Embodiment)ħ.3 Action (Fifth Embodiment)ĩ.1 Configuration Example of Optical Shutterĩ.2 Configuration Example of Optical Isolatorĩ.3 Hardware Environment of Control Section.3.1.2 Configuration of Light Emission Control System Section.16 illustrates an example of hardware environment of a control section. 15 schematically illustrates a configuration example of an optical isolator.įIG. 14 schematically illustrates a configuration example of an optical shutter.įIG. 13 schematically illustrates a configuration example of a light emission control system section including control of a target in an on-demand target feeder.įIG. 12 schematically illustrates a configuration example of a light emission control system section including control of a pre-pulsed laser unit.įIG. 11 is a timing chart illustrating an example of timings of light emission control performed by the light emission control system section illustrated in FIG. 10 schematically illustrates a configuration example of a light emission control system section including control of an optical isolator.įIG. 9 is a timing chart illustrating an example of timings of light emission control performed by the light emission control system section illustrated in FIG. 8 schematically illustrates a configuration example of a light emission control system section including a timing signal generating circuit.įIG. 7 is a timing chart illustrating an example of timings of light emission control performed by the light emission control system section illustrated in FIG. 6 schematically illustrates a configuration example of a light emission control system section including control of an optical shutter.įIG. 5 illustrates an example of pulse energy of pulsed laser light outputted through the light emission control illustrated in FIG. 4 is a timing chart illustrating an example of timings of light emission control performed by the light emission control system section illustrated in FIG. ![]() 3 schematically illustrates a configuration example of a light emission control system section.įIG. ![]() 2 schematically illustrates a configuration example of an EUV light generating system generating EUV light based on a burst signal.įIG. 1 schematically illustrates a configuration example of an exemplary LPP EUV light generating system.įIG. Some example embodiments of the disclosure are described below as mere examples with reference to the accompanying drawings.įIG. ![]() SUMMARYĪn extreme ultraviolet light generating system according to an embodiment of the disclosure may include: a laser apparatus configured to provide pulsed laser light inside a chamber in which EUV light is generated an optical shutter disposed on an optical path of the pulsed laser light and a controller configured to open or close the optical shutter, based on a generation signal supplied from an external unit, the generation signal instructing generation of the EUV light. 2012/0080584.Īs the EUV light generating apparatus, three kinds of apparatuses, laser produced plasma (LPP) apparatus using plasma generated by application of a laser beam to a target substance, a discharge produced plasma (DPP) apparatus using plasma generated by discharge, and a synchrotron radiation (SR) apparatus using orbital radiation light have been proposed. To meet such requirement for the microfabrication on the order of, for example, 32 nm or less, development is anticipated of an exposure apparatus that includes a combination of a reduced projection reflective optics and an extreme ultraviolet light generating apparatus that generates extreme ultraviolet (EUV) light with a wavelength of about 13 nm. In the next generation, microfabrication on the order of 70 nm to 45 nm, and further microfabrication on the order of 32 nm or less are bound to be required. In recent years, miniaturization of a transcription pattern of an optical lithography in a semiconductor process is drastically progressing with the development in fining of the semiconductor process. The present disclosure relates to an extreme ultraviolet light generating system to generate extreme ultraviolet (EUV) light. 20, 2013, the entire contents of both of which are incorporated herein by reference. 12, 2014, which claims the benefit of Japanese Priority Patent Application JP2013-129633, filed Jun. ![]() This is a continuation of International Application No.
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